Current-induced metallic behavior in Pr0.5Ca0.5MnO3 thin films: competition between Joule heating and nonlinear conduction mechanism
نویسندگان
چکیده
Thin films of Pr0.5Ca0.5MnO3 manganites exhibiting charge/orbital-ordered properties with colossal magnetoresistance have been synthesized by the pulsed laser deposition technique on both (100)-SrTiO3 and (100)-LaAlO3 substrates. The effects of current-induced metallic-behavior of the films are investigated as a function of the temperature and the magnetic field. Calculations based on a heat transfer model across the substrate, and our resistivity measurements reveal effects of Joule heating on charge transport over certain ranges of temperatures and magnetic fields. Our results also indicate that a nonlinear conduction, which cannot be explained by homogeneous Joule heating of the film, is observed when the material is less resistive (<10 Ω.cm). The origin of this behavior is explained with a model based on local thermal instabilities associated with phase-separation mechanism and a change in the
منابع مشابه
Resistance switching at the nanometre scale in amorphous carbon
The electrical transport and resistance switching mechanism in amorphous carbon (a-C) is investigated at the nanoscale. The electrical conduction in a-C thin films is shown to be captured well by a Poole–Frenkel transport model that involves nonisolated traps. Moreover, at high electric fields a field-induced threshold switching phenomenon is observed. The following resistance change is attribu...
متن کاملEnhanced Unipolar Resistive Switching Characteristics of Hf0.5Zr0.5O2 Thin Films with High ON/OFF Ratio
A metal-insulator-metal structure resistive switching device based on H0.5Z0.5O₂ (HZO) thin film deposited by pulse laser deposition (PLD) has been investigated for resistive random access memory (RRAM) applications. The devices demonstrated bistable and reproducible unipolar resistive switching (RS) behaviors with an extremely high OFF/ON ratio over 5400. The retention property had no degradat...
متن کاملThermal and carrier transport originating from photon recycling and non-radiative recombination in laser micromachining of GaAs thin films
Coupled thermal and carrier transports (electron/ hole generation, recombination, diffusion and drifting) in laser photoetching of GaAs thin film is investigated. A new volumetric heating mechanism originating from SRH (Shockley– Read–Hall) non-radiative recombination and photon recycling is proposed and modeled based on recent experimental findings. Both volumetric SRH heating and Joule heatin...
متن کاملDisorder-induced melting of the charge order in thin films of Pr0.5Ca0.5MnO3
– We have studied the magnetic-field-induced melting of the charge order in thin films of Pr0.5Ca0.5MnO3 (PCMO) films on SrTiO3 (STO) by X-ray diffraction, magnetization and transport measurement. At small thickness (25 nm) the films are under tensile strain and the low-temperature melting fields are of the order of 20 T or more, comparable to the bulk value. With increasing film thickness the ...
متن کاملBipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method
Bipolar resistive switching properties and endurance switching behavior of the neodymium oxide (Nd₂O₃) thin films resistive random access memory (RRAM) devices for a high resistive status/low resistive status (HRS/LRS) using a low temperature supercritical carbon dioxide fluid (SCF) improvement post-treatment process were investigated. Electrical and physical properties improvement of Nd₂O₃ thi...
متن کامل